Transphorm Inc., Goleta, California, (OTCQB: TGAN), a pioneer in the development and manufacturing of high reliability, high performance gallium nitride (GaN) power semiconductors, today announced its second 900 V GaN FET (Field-effect transistor) is now in production. The TP90H050WS offers a typical on-resistance of 50 milliohms with a one kilovolt transient spike rating and is now JEDEC qualified.
The JEDEC Solid State Technology Association is an independent semiconductor engineering trade organization and standardization body headquartered in Arlington, Virginia, United States.
The primary target markets are broad industrial and renewable energy, including applications such as photovoltaic inverters, battery charging, uninterruptable power supplies, lighting and energy storage. Additionally, with the 900 V portfolio, Transphorm is working its way up the voltage range to include three phase applications.
Introduced last year, the TP90H050WS is the company’s second 900 V device following the TP90H180PS. The two-chip normally-off power transistor delivers a ±20 V gate robustness in a standard TO-247 package, increasing its reliability and designability for power systems. The combination of Transphorm’s high-speed GaN and the thermally robust TO-247 package enables systems to reach greater than 99 percent efficiency while generating up to 10 kW of power in typical half bridge configurations with bridgeless totem-pole power factor correction (PFC).
“Transphorm’s work on its 900 V platform illustrates the capability of high voltage gallium nitride power transistors,” said Philip Zuk, VP of Technical Marketing and NA Sales, Transphorm. “This device gives us the ability to support applications that were not previously accessible to us. We have received strong interest when sampling these 50 milliohm FETs. We’re proud to say that their availability status has shifted now to high-volume production to meet customer demand.”
900 V GaN in Application
Illinois Institute of Technology (IIT) is currently working with the TP90H050WS in an ARPA-E Circuits program that uniquely brought together Transphorm’s leading edge product with IIT’s innovative solid state switching topologies. The project will generate reliable solid-state circuit breaker (SSCBs) for renewable energy microgrids. It includes developing an autonomously operated, programmable, and intelligent bi-directional SSCB using the 900 V GaN devices.
“Our SSCB project required a non-traditional power conversion solution that not only outperformed mechanical circuit breakers speed-wise, but also helped us reduce power loss,” explained Dr. John Shen, IIT. “Transphorm’s GaN technology surpassed our expectations. It delivered the full package. High power density, reliable bi-directionality, and, as the only 900 V GaN device on the market, unprecedented power output in a small package.”
Transphorm, Inc., a global leader in the GaN revolution, designs and manufactures high performance and high reliability GaN semiconductors for high voltage power conversion applications. Having one of the largest Power GaN IP portfolios of more than 1,000 owned or licensed patents, Transphorm produces the industry’s first JEDEC and AEC-Q101 qualified high voltage GaN semiconductor devices. The Company’s vertically integrated device business model allows for innovation at every development stage: design, fabrication, device, and application support. Transphorm’s innovations are moving power electronics beyond the limitations of silicon to achieve over 99% efficiency, 40% more power density and 20% lower system cost. Transphorm is headquartered in Goleta, California and has manufacturing operations in Goleta and Aizu, Japan.